![Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation]()
Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al ImplantationStrel'chuk, Anatoly M.; Lebedev, A.A.; Davydov, D.V.; Savkina, N.S.; Kuznetsov, Alexey N.; Valakh, M.; Kiselev, V.S.; Romanyuk, B.N.; Raynaud, Christophe; Chante, Jean-Pierre; Locatelli, Marie Laure · Materials Science Forum · 2004