水路客货运输专刊 2004年 第4期
- 作者交通部水运司编
- 出版社北京：人民交通出版社
- 标注页数207 页
- 文件页数217 页
- 文件大小20.65 MB
- 出版时间2005
- ISBN15114·0813
Molecular beam epitaxy growth and characterization of DyP/GaAs, DyAs/GaAs, GaAs/DyP/GaAs, and GaAs/DyAs/GaAs heterostructuresP. P. Lee · 1998
Interfacial barrier characteristics of LTGaAs on low doped GaAsGaAs/nGaAs and LTGaAs/pGaAs layersK.M Lipka; B Splingart; X Zhang; M Poese; K Panzlaff; E Kohn · 1993
Comparison of 80-200 nm gate length Al0.25GaAs/GaAs/(GaAs:AlAs), Al0.3GaAs/In0.15 GaAs/GaAs, and In0.52AlAs/In0.65GaAs/InP HEMTsThayne, I.G.; Jensen, G.U.; Holland, M.C.; Yaochung Chen; Weigi Li; Paulsen, A.; Davies, J.H.; Beaumont, S.P.; Bhattacharya, P.K. · 1995
Electrical measurements on n+-GaAs/undoped AlAs/n-GaAs and n+-GaAs/undoped AlAs:GaAs superlattice/n-GaAs capacitorsKirby, P. B.; Kerr, T. M. · Applied Physics Letters · 1987
Optical in-situ analysis of GaAs/AlAs/GaAs and GaAs/(Al)GaAs/GaAs atomic layer growth using GaCl3, AlCl3 and AsH3M. Akamatsu; S. Narahara; T. Kobayashi; F. Hasegawa · 1994
AIP Conference Proceedings [AIP XXII INTERNATIONAL CONFERENCE ON RAMAN SPECTROSCOPY - Boston (MA) (8–10 August 2010)] - Studies of Strain in Heterostructures GaAs∕GaAs, GaAs:C∕GaAs and GaAs:Si∕GaAs by Spectroscopy μ-RamanJurado, J. F.; Hernández, C. Vargas; Sánchez, J. E.; Niebles, F. Racedo; Champion, P. M.; Ziegler, L. D. · 2010
Epitaxial growth and characterization of DyP/GaAs, DyAs/GaAs, and GaAs/DyP/GaAs heterostructuresP. P. Lee; R. J. Hwu; L. P. Sadwick; H. Balasubramaniam; B. R. Kumar; R. Alvis; R. T. Lareau; M. C. Wood · 1998
Photoreflectance Spectra from GaAs Buffer Layer of GaAs/AlAs Multiple Quantum Well/GaAs Buffer/GaAs SubstrateHaraguchi, Masanobu; Nakagawa, Yoshinori; Fukui, Masuo; Muto, Shunichi · Japanese Journal of Applied Physics · 1991
Electronic transitions in CdTe under pressurePrakash, Maneesha; Chandrasekhar, Meera; Chandrasekhar, H. R.; Miotkowski, I.; Ramdas, A. K. · Physical Review B · 1990
Site symmetry and deformation-potential constants of Al- <i>X</i> acceptors in siliconChandrasekhar, H. R.; Ramdas, A. K. · Physical Review B · 1986
Determination of the Deformation-Potential Constant of the Conduction Band of Silicon from the Piezospectroscopy of DonorsTekippe, V. J.; Chandrasekhar, H. R.; Fisher, P.; Ramdas, A. K. · Physical Review B · 1972
Phonon frequencies of goldSingh, Natthi; Prakash, Satya · Physical Review B · 1974
Graphene nanoribbons subject to gentle bendsKoskinen, P. · Physical Review B · 2012
Topological p-n junctionWang, Jing; Chen, Xi; Zhu, Bang-Fen; Zhang, Shou-Cheng · Physical Review B · 2012
Nonlocal feedback in ferromagnetic resonanceBose, Thomas; Trimper, Steffen · Physical Review B · 2012
Dissipationless phonon Hall viscosityBarkeshli, Maissam; Chung, Suk Bum; Qi, Xiao-Liang · Physical Review B · 2012
Surface states of topological insulatorsZhang, Fan; Kane, C. L.; Mele, E. J. · Physical Review B · 2012
Graphene hyperlens for terahertz radiationAndryieuski, Andrei; Lavrinenko, Andrei V.; Chigrin, Dmitry N. · Physical Review B · 2012
Persistent current induced by quantum lightKibis, O. V. · Physical Review B · 2012