Characteristics of planar transistors under localized compressive stresses
- 期刊名称Proceedings of the IEEE
- 作者Ohwada, A.
- 卷第56卷
- 期第1期
- 印刷ISSN0018-9219
- 文件大小193.81KB
- 发表时间1968
- DOI10.1109/proc.1968.6158
- 页码87-88
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