Electronic structure of the isolated vacancy in silicon
- 期刊名称Radiation Effects
- 作者Larkins, F. P.
- 卷第9卷
- 印刷ISSN0033-7579
- 文件大小289.13KB
- 发表时间1971-05
- DOI10.1080/00337577108242023
- 页码5-7
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