Thiophene-based monolayer OFETs prepared by Langmuir techniques
- 作者I. Mcculloch; O. D. Jurchescu; I. Kymissis; R. Shinar; L. Torsi; E. V. Agina; A. S. Sizov; D. S. Anisimov; A. A. Trul; O. V. Borshchev; D. Y. Paraschuk; M. A. Shcherbina; S. N. Chvalun; S. A. Ponomarenko
- 文件大小2958.57KB
- DOI10.1117/12.2188338
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