Electrophysical characteristics of accidental-doping defects in epitaxial n-type gallium arsenide
- 作者V. I. Khokhlov; S. A. Dvoretskii; Yu. G. Sidorov; A. F. Kravchenko
- 卷第17卷
- 期第10期
- 印刷ISSN1064-8887
- 电子ISSN1573-9228
- 文件大小464.04KB
- 发表时间1974-10
- DOI10.1007/bf00891297
- 页码1414-1418
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