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Calculation of the quasi-Fermi levels and characteristics of spontaneous emission from heavily doped semiconductors

Calculation of the quasi-Fermi levels and characteristics of spontaneous emission from heavily doped semiconductors

Aleksanyan, A G; Poluéktov, I A; Popov, Yurii M
  • 期刊名称Soviet Journal of Quantum Electronics
  • 作者Aleksanyan, A G; Poluéktov, I A; Popov, Yurii M
  • 卷第3卷
  • 期第5期
  • 印刷ISSN0049-1748
  • 文件大小87.54KB
  • 发表时间1974-05-31
  • DOI10.1070/QE1974v003n05ABEH005542
  • 页码435-436
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