[ASCE TETRAHEDRALLY BONDED AMORPHOUS SEMICONDUCTORS - Yorktown Heights, New York (USA) (20–22 March 1974)] TETRAHEDRALLY BONDED AMORPHOUS SEMICONDUCTORS: International Conference - Pressure-Induced Semiconductor-Metal Transitions in Amorphous Si, Ge and

Minomura, S.; Shimomura, O.; Saki, N.; Asaumi, K.; Endo, H.; Tamura, K.; Fukushima, J.; Tsuji, K.

作者Minomura, S.; Shimomura, O.; Saki, N.; Asaumi, K.; Endo, H.; Tamura, K.; Fukushima, J.; Tsuji, K.
文件大小587.55KB
发表时间1974
DOI10.1063/1.2945967
页码234-240

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