Depth distribution of gallium ions implanted into silicon crystals
- 作者G. Dearnaley; G. A. Gard; W. Temple; M. A. Wilkins
- 文件大小414.26KB
- 发表时间1975
- DOI10.1063/1.88270
Phonon frequencies of goldSingh, Natthi; Prakash, Satya · Physical Review B · 1974
Graphene nanoribbons subject to gentle bendsKoskinen, P. · Physical Review B · 2012
Topological p-n junctionWang, Jing; Chen, Xi; Zhu, Bang-Fen; Zhang, Shou-Cheng · Physical Review B · 2012
Nonlocal feedback in ferromagnetic resonanceBose, Thomas; Trimper, Steffen · Physical Review B · 2012
Dissipationless phonon Hall viscosityBarkeshli, Maissam; Chung, Suk Bum; Qi, Xiao-Liang · Physical Review B · 2012
Surface states of topological insulatorsZhang, Fan; Kane, C. L.; Mele, E. J. · Physical Review B · 2012
Graphene hyperlens for terahertz radiationAndryieuski, Andrei; Lavrinenko, Andrei V.; Chigrin, Dmitry N. · Physical Review B · 2012
Persistent current induced by quantum lightKibis, O. V. · Physical Review B · 2012