Current controlled liquid phase epitaxial (CCLPE) growth of InGaAs on (100) InPA. Abul-Fadl; E. K. Stefanakos; W. J. Collis · 1982

Effects of Ytterbium Addition on Liquid Phase Epitaxial Growth of InGaAs/InP HeterostructuresDavis, A.; Dauplaise, H.M.; Lorenzo, J.P.; Ramseyer, G.O.; Horrigan, J. A. · MRS Proceedings · 1993

Liquid phase epitaxial growth of InGaAs on InP using rare-earth-treated meltsGao, Wei; Berger, Paul R.; Ervin, Matthew H.; Pamulapati, Jagadeesh; Lareau, Richard T.; Schauer, Stephen · Journal of Applied Physics · 1996

SPIE Proceedings [SPIE Photonics West '96 - San Jose, CA (Saturday 27 January 1996)] Photodetectors: Materials and Devices - <title>Liquid-phase epitaxial growth process of InGaAs on InP with rare-earth treatment</title>Gao, Wei; Berger, Paul R.; Hunsperger, Robert G.; Pamulapati, Jagadeesh; Lareau, Richard T.; Brown, Gail J.; Razeghi, Manijeh · 1996

[IEEE LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - Newport, RI, USA (21-24 April 1992)] LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - Effects of ytterbium addition on liquid phase epitaxial growth of InGaAs/InP heterostructuresDavis, A.; Dauplaise, H.M.; Gregg, M.R.; Lorenzo, J.P.; Walsh, L.D.; Mattila, J.B. · 1992