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A critical temperature for the growth of SiC on Si and its effect on stacking-fault nucleation in Si homoepitaxy in high vacuum

A critical temperature for the growth of SiC on Si and its effect on stacking-fault nucleation in Si homoepitaxy in high vacuum

F. W. Smith; B. Meyerson; W. Miller

作者F. W. Smith; B. Meyerson; W. Miller
文件大小511.90KB
发表时间1977
DOI10.1063/1.89808

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