Tem study of dark line defect growth from dislocation clusters in (GaAl)As-GaAs double heterostructure lasers

• 作者K. Ishida; T. Kamejima
• 卷第8卷
• 期第1期
• 印刷ISSN0361-5235
• 电子ISSN1543-186X
• 文件大小2939.98KB
• 发表时间1979-01
• DOI10.1007/bf02655641
• 页码57-73