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The application of low angle Rutherford backscattering and channelling techniques to determine implantation induced disorder profile distributions in semiconductors

N.A.G. Ahmed; C.E. Christodoulides; G. Carter; M.J. Nobes; A.I. Titov

作者N.A.G. Ahmed; C.E. Christodoulides; G. Carter; M.J. Nobes; A.I. Titov
卷第168卷
印刷ISSN0029-554X
文件大小469.03KB
发表时间1980
DOI10.1016/0029-554x(80)91266-5
页码283-288

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