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Effect of Quantizing Magnetic Field on the Capacitance of MOS Structures of Small-Gap Semiconductors Under Strong Surface Fields

Effect of Quantizing Magnetic Field on the Capacitance of MOS Structures of Small-Gap Semiconductors Under Strong Surface Fields

D. R. Choudhury; A. K. Chowdhury; A. N. Chakravarti

作者D. R. Choudhury; A. K. Chowdhury; A. N. Chakravarti
文件大小330.49KB
发表时间1980
DOI10.1088/0031-8949/22/6/019

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