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Effect of a quantizing magnetic field on the capacitance of MOS structures of small-gap semiconductors

Effect of a quantizing magnetic field on the capacitance of MOS structures of small-gap semiconductors

D. R. Choudhury; A. K. Chowdhury; A. N. Chakravarti
  • 作者D. R. Choudhury; A. K. Chowdhury; A. N. Chakravarti
  • 卷第22卷
  • 期第2期
  • 印刷ISSN0947-8396
  • 电子ISSN1432-0630
  • 文件大小332.37KB
  • 发表时间1980-06
  • DOI10.1007/bf00885997
  • 页码145-148
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