Model Robust, Linear-Optimal Designs
- 期刊名称Technometrics
- 作者R. Dennis Cook and Christopher J. Nachtsheim
- 卷第24卷
- 期第1期
- 印刷ISSN0040-1706
- 文件大小268.64KB
- 发表时间1982-02
- DOI10.2307/1267577
- 页码49-54
Photoconductivity of gallium arsenide epitaxial layersParenteau, Martin; Fengmei, Wu; Jorio, Anouar; Carlone, Cosmo · Journal of Applied Physics · 1995
Radiation induced carbon complexes in gallium arsenideCosmo Carlone; Chedly Rejeb; Anouar Jorio; Martin Parenteau; Shyam M. Khanna · 1994
Gigaelectron-volt heavy ion irradiation of gallium arsenideCarlone, Cosmo; Parenteau, Martin; Khanna, Shyam M. · Journal of Applied Physics · 1998
Investigation of Free Exciton Properties in GaAs Epitaxial LayerFengmei, Wu; Yi, Shi; Parenteau, Martin; Jorio, Anouar; Youdou, Zheng; Carlone, Cosmo · MRS Proceedings · 1995
Radiation induced carrier enhancement and intrinsic defect transformation in n-GaAsJorio, Anouar; Rejeb, Chedly; Parenteau, Martin; Carlone, Cosmo; Khanna, Shyam M. · Journal of Applied Physics · 1993
Optical identification of the gallium vacancy in neutron-irradiated gallium arsenideJorio, Anouar; Wang, Aiguo; Parenteau, Martin; Carlone, Cosmo; Rowell, Nelson L.; Khanna, Shyam M. · Physical Review B · 1994
SPIE Proceedings [SPIE Lasers and Materials in Industry and Opto-Contact Workshop - Quebec, Canada (Monday 13 July 1998)] Materials Modification by Ion Irradiation - <title>Gallium vacancy production in carbon, oxygen, and arsenic irradiated n-type gallium arsenide</title>Houdayer, Alain J.; Carlone, Cosmo; Yoshino, Kenji; Aubin, Marcel; Aboujja, Sidi; Parenteau, Martin; Knystautas, Emile J. · 1998