[IRE 1982 International Electron Devices Meeting - ()] 1982 International Electron Devices Meeting - Deep trench isolated CMOS devices

• 作者Rung, R.D.; Momose, H.; Nagakubo, Y.
• 文件大小1065.89KB
• 发表时间1982
• DOI10.1109/IEDM.1982.190261
• 页码237-240