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Growth and doping of gallium arsenide using molecular beam epitaxy (MBE): Thermodynamic and kinetic aspects

Growth and doping of gallium arsenide using molecular beam epitaxy (MBE): Thermodynamic and kinetic aspects

R. Heckingbottom; G.J. Davies; K.A. Prior

作者R. Heckingbottom; G.J. Davies; K.A. Prior
卷第132卷
文件大小873.63KB
发表时间1983
DOI10.1016/0039-6028(83)90548-4
页码375-389

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