Properties of amorphous silicon produced by ion implantation: Thermal annealing
- 作者W.G. Spitzer; G.K. Hubler; T.A. Kennedy
- 印刷ISSN0167-5087
- 文件大小305.32KB
- 发表时间1983
- DOI10.1016/0167-5087(83)90816-5
- 页码309-312
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