Importance of electron scattering with coupled plasmon-optical phonon modes in GaAs planar-doped barrier transistors
- 期刊名称IEEE Electron Device Letters
- 作者Hollis, M.A.; Palmateer, S.C.; Eastman, L.F.; Dandekar, N.V.; Smith, P.M.
- 卷第4卷
- 期第12期
- 印刷ISSN0741-3106
- 文件大小481.29KB
- 发表时间1983-12
- DOI10.1109/edl.1983.25795
- 页码440-443
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