Shallow diffusion profile analysis of phosphorus in silicon at 1100 °C and an empirical fit
- 期刊名称Journal of Applied Physics
- 作者Eranna, G.; Kakati, D.
- 卷第54卷
- 期第11期
- 印刷ISSN0021-8979
- 文件大小421.54KB
- 发表时间1983
- DOI10.1063/1.331868
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