Si-doped GaAs epitaxial layers grown by metalorganic chemical vapor deposition
- 期刊名称Journal of Applied Physics
- 作者Okamoto, K.; Onozawa, S.; Imai, T.
- 卷第56卷
- 期第10期
- 印刷ISSN0021-8979
- 文件大小457.51KB
- 发表时间1984
- DOI10.1063/1.333772
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