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Epitaxial Growth of High-Purity GaAs by Low-Pressure MOCVD

Epitaxial Growth of High-Purity GaAs by Low-Pressure MOCVD

Takagishi, Shigenori; Mori, Hideki

期刊名称Japanese Journal of Applied Physics
作者Takagishi, Shigenori; Mori, Hideki
卷第23卷
印刷ISSN0021-4922
文件大小376.90KB
发表时间1984-2-20
DOI10.1143/JJAP.23.L100

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