Revealing of defects in InP by shallow (submicron) photoetching
- 期刊名称Journal of Applied Physics
- 作者Weyher, J. L.; Giling, L. J.
- 卷第58卷
- 期第1期
- 印刷ISSN0021-8979
- 文件大小676.43KB
- 发表时间1985
- DOI10.1063/1.335715
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