Electronic properties and chemical interactions at III–V compound semiconductor surfaces: Germanium and oxygen on GaAs(110) and InP(110) cleaved surfaces

• 作者Winfried Mönch
• 印刷ISSN0378-5963
• 文件大小838.39KB
• 发表时间1985
• DOI10.1016/0378-5963(85)90204-1
• 页码705-723