Atomic bonding at the Si-Au and Si-Cu interfaces
- 作者H. Dallaporta; A. Cros
- 卷第178卷
- 印刷ISSN0167-2584
- 文件大小62.65KB
- 发表时间1986
- DOI10.1016/0167-2584(86)90129-5
Resonant raman scattering by acceptors and LO phonons in GaAs/AlGaAs multiple quantum wellsI. Brener; E. Cohen; Arza Ron; L. Pfeiffer · 1990
Photoreflectance and Resonant Raman Scattering of Above-Barrier Transitions in a GaAs/AlGaAs SuperlatticeNakayama, Masaaki; Sugie, Ryuichi; Ohta, Hirotaka; Nakashima, Shin-ichi · Japanese Journal of Applied Physics · 1995
Resonant Raman Scattering in GaAs/AlGaAs Quantum Wells Modulated by Microwave Irradiation and by Electron–Hole PhotogenerationB. M. Ashkinadze; E. Linder; E. Cohen; Arza Ron · 1997
Resonant Raman scattering in GaAs-AlGaAs and GaAs-AlAs multi-quantum well structures and its dependence on electric fieldT. Furuta; H. Sakaki; J. Yoshino · 1986
Photoluminescence and absorption linewidth of extremely flat GaAs-AlAs quantum wells prepared by molecular beam epitaxy including interrupted deposition for atomic layer smoothingM. Tanaka; H. Sakaki; J. Yoshino; T. Furuta · 1986
Photoluminescence and absorption linewidth of extremely flat GaAs-AlAs quantum wells prepared by molecular beam Epitaxy including interrupted deposition for atomic layer smoothingM. Tanaka; H. Sakaki; J. Yoshino; T. Furuta · 1986