GaAs inversion-base bipolar transistor (GaAs IBT)
- 作者K. Matsumoto; Y. Hayashi; N. Ha; Takafumi Yao; M. Kato; T. Miyashita; N. Fukuhara; H. Hirashima; T. Kinosada
- 卷第7卷
- 期第11期
- 文件大小275.50KB
- 发表时间1986
- DOI10.1109/EDL.1986.26498
- 页码627-628
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