Structure changes by annealing and doping of a-Si:H prepared at high deposition rate studied by means of positron annihilation

Hiroyuki Nasu; Masao Watanabe; Kiyoshi Shizuma; Seigo Makida; Masato Ueda; Takeshi Imura; Yukio Osaka; Hiromi Hasai

作者Hiroyuki Nasu; Masao Watanabe; Kiyoshi Shizuma; Seigo Makida; Masato Ueda; Takeshi Imura; Yukio Osaka; Hiromi Hasai
文件大小353.51KB
发表时间1987
DOI10.1016/s0022-3093(87)80158-8
页码563-570

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