ESR and IR studies on doped a-Si1 − xCx :H and a-Si1 − xNx:H films
- 作者Chen Guanghua; Zhang Fangqing; Xu Xixiang; Zheng Chengzhi
- 卷第90卷
- 文件大小335.95KB
- 发表时间1987
- DOI10.1016/s0022-3093(87)80426-x
- 页码275-282
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