Valence-electron properties of a-Si1 − xCx:H studied by UPS and EELS
- 作者Xu Xixiang; Zhang Fangqing; Chen Guanghua
- 卷第90卷
- 文件大小175.35KB
- 发表时间1987
- DOI10.1016/s0022-3093(87)80430-1
- 页码295-298
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