MBE growth of InGaAs-InGaAlAs heterostructures for applications to high-speed devices

• 作者S. Hiyamizu; T. Fujii; S. Muto; T. Inata; Y. Nakata; Y. Sugiyama; S. Sasa
• 卷第81卷
• 印刷ISSN0022-0248
• 文件大小843.17KB
• 发表时间1987
• DOI10.1016/0022-0248(87)90416-7
• 页码349-358