A.c. properties of polycrystalline GaAs and (GaAs)1−x(SiC2:H)x grown by metal-organic chemical vapour deposition
- 作者S. Sahli; Y. Segui; F. Maury
- 卷第146卷
- 期第3期
- 印刷ISSN0040-6090
- 文件大小557.62KB
- 发表时间1987
- DOI10.1016/0040-6090(87)90431-7
- 页码241-254
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