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Effect of growth sequence on the band discontinuities at AlAs/GaAs (100) and (110) heterojunction interfaces

Effect of growth sequence on the band discontinuities at AlAs/GaAs (100) and (110) heterojunction interfaces

J. R. Waldrop
  • 作者J. R. Waldrop
  • 文件大小968.69KB
  • 发表时间1987
  • DOI10.1116/1.583713
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