Subsurface burnout mechanisms in gallium arsenide (GAAS) electronic devices
- 作者W. T. Anderson; D. V. Morgan; F. A. Buot; A. Christou
- 卷第4卷
- 期第3期
- 印刷ISSN0748-8017
- 电子ISSN1099-1638
- 文件大小1369.51KB
- 发表时间1988
- DOI10.1002/qre.4680040309
- 页码255-268
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