Negative differential resistance in AlAs/NiAl/AlAs metal base quantum wells: toward a resonant tunneling transistor
- 作者Tabatabaie, N.; Sands, T.; Harbison, J.P.; Gilchrist, H.L.; Keramidas, V.G.
- 卷第35卷
- 期第12期
- 印刷ISSN0018-9383
- 电子ISSN1557-9646
- 文件大小300.11KB
- 发表时间1988
- DOI10.1109/16.8890
- 页码2453-2454
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