![AIP Conference Proceedings [AIP THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012 - Zurich, Switzerland (29 July–3 August 2012)] - Origins of low resistivity and Ge donor level in Ge ion-implanted ZnO bulk single crystals]()
AIP Conference Proceedings [AIP THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012 - Zurich, Switzerland (29 July–3 August 2012)] - Origins of low resistivity and Ge donor level in Ge ion-implanted ZnO bulk single crystalsKamioka, K.; Oga, T.; Izawa, Y.; Kuriyama, K.; Kushida, K. · 2013