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Two-dimensional analysis of the surface recombination effect on current gain for GaAlAs/GaAs HBTs

Two-dimensional analysis of the surface recombination effect on current gain for GaAlAs/GaAs HBTs

Hiraoka, Y.S.; Yoshida, J.
  • 期刊名称IEEE Transactions on Electron Devices
  • 作者Hiraoka, Y.S.; Yoshida, J.
  • 卷第35卷
  • 期第7期
  • 印刷ISSN0018-9383
  • 文件大小532.54KB
  • 发表时间1988-7
  • DOI10.1109/16.3336
  • 页码857-862
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