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Electrical properties of InAs epilayers grown by molecular beam epitaxy on Si substrates

Electrical properties of InAs epilayers grown by molecular beam epitaxy on Si substrates

Kalem, Ş.; Chyi, J.; Litton, C. W.; Morkoç, H.; Kan, S. C.; Yariv, A.

期刊名称Applied Physics Letters
作者Kalem, Ş.; Chyi, J.; Litton, C. W.; Morkoç, H.; Kan, S. C.; Yariv, A.
卷第53卷
期第7期
印刷ISSN0003-6951
文件大小542.14KB
发表时间1988
DOI10.1063/1.99857

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