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Nanometer lithography for III–V semiconductor wires using chloromethylated poly-α-methylstyrene resist

Nanometer lithography for III–V semiconductor wires using chloromethylated poly-α-methylstyrene resist

Maile, B. E.
  • 期刊名称Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
  • 作者Maile, B. E.
  • 卷第6卷
  • 期第6期
  • 印刷ISSN0734-211X
  • 文件大小837.00KB
  • 发表时间1988-11
  • DOI10.1116/1.584076
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