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Arsenic Redistribution and Outdiffusion in Implanted Czochralski-Grown P-Type Silicon During Rapid Thermal Annealing

Arsenic Redistribution and Outdiffusion in Implanted Czochralski-Grown P-Type Silicon During Rapid Thermal Annealing

Chaussemy, G.; Canut, B.; Kumar, S. N.; Barbier, D.; Laugier, A.

期刊名称MRS Proceedings
作者Chaussemy, G.; Canut, B.; Kumar, S. N.; Barbier, D.; Laugier, A.
卷第100卷
电子ISSN1946-4274
文件大小325.35KB
发表时间1988-1
DOI10.1557/proc-100-695

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