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Silicon surface passivation by hydrogen termination: A comparative study of preparation methods

Silicon surface passivation by hydrogen termination: A comparative study of preparation methods

Fenner, D. B.; Biegelsen, D. K.; Bringans, R. D.

期刊名称Journal of Applied Physics
作者Fenner, D. B.; Biegelsen, D. K.; Bringans, R. D.
卷第66卷
期第1期
印刷ISSN0021-8979
文件大小1129.15KB
发表时间1989
DOI10.1063/1.343839

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