Strain relaxation phenomena in GexSi1−x/Si strained structures
R. Hull; J.C. Bean; D.J. Eaglesham; J.M. Bonar; C. Buescher
- 作者R. Hull; J.C. Bean; D.J. Eaglesham; J.M. Bonar; C. Buescher
- 卷第183卷
- 印刷ISSN0040-6090
- 文件大小863.35KB
- 发表时间1989
- DOI10.1016/0040-6090(89)90437-9
- 页码117-132