Effect of bulk recombination current on the current gain of GaAs/AlGaAs heterojunction bipolar transistors in GaAs-on-Si
- 期刊名称IEEE Electron Device Letters
- 作者Ma, T.; Lee, W.-S.; Adkisson, J.W.; Harris, J.S.
- 卷第10卷
- 期第10期
- 印刷ISSN0741-3106
- 电子ISSN1558-0563
- 文件大小280.89KB
- 发表时间1989-10
- DOI10.1109/55.43099
- 页码458-460
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