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[IEEE International Technical Digest on Electron Devices Meeting - Washington, DC, USA (3-6 Dec. 1989)] International Technical Digest on Electron Devices Meeting - A 3-D fluid simulation of a dry-etching aluminium hexode reactor

[IEEE International Technical Digest on Electron Devices Meeting - Washington, DC, USA (3-6 Dec. 1989)] International Technical Digest on Electron Devices Meeting - A 3-D fluid simulation of a dry-etching aluminium hexode reactor

Ulacia F, J.I.

作者Ulacia F, J.I.
文件大小296.37KB
发表时间1989
DOI10.1109/iedm.1989.74377
页码707-710

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