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Relaxation processes following excitation and ionization of SiF4 in the vicinity of the silicon 2p threshold. II. Dissociation of the molecular ions

Relaxation processes following excitation and ionization of SiF4 in the vicinity of the silicon 2p threshold. II. Dissociation of the molecular ions

Lablanquie, P.; Souza, A. C. A.; de Souza, G. G. B.; Morin, P.; Nenner, I.

期刊名称The Journal of Chemical Physics
作者Lablanquie, P.; Souza, A. C. A.; de Souza, G. G. B.; Morin, P.; Nenner, I.
卷第90卷
期第12期
印刷ISSN0021-9606
文件大小916.63KB
发表时间1989
DOI10.1063/1.456236

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