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Effects of background Fe concentrations in the annealing of ion-implanted Si into InP substrates for InP metal-insulator-semiconductor field-effect transistor applications

Effects of background Fe concentrations in the annealing of ion-implanted Si into InP substrates for InP metal-insulator-semiconductor field-effect transistor applications

Duhamel, N.; Krauz, P.; Gao, Y.
  • 期刊名称Journal of Applied Physics
  • 作者Duhamel, N.; Krauz, P.; Gao, Y.
  • 卷第66卷
  • 期第4期
  • 印刷ISSN0021-8979
  • 文件大小633.21KB
  • 发表时间1989
  • DOI10.1063/1.344359
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