Observation and control of the amphoteric behaviour of Si-doped InSb grown on GaAs by MBE

Parker, S D; Williams, R L; Droopad, R; Stradling, R A; Barnham, K W J; Holmes, S N; Laverty, J; Phillips, C C; Skuras, E; Thomas, R; Zhang, X; Staton-Bevan, A; Pashley, D W

期刊名称Semiconductor Science and Technology
作者Parker, S D; Williams, R L; Droopad, R; Stradling, R A; Barnham, K W J; Holmes, S N; Laverty, J; Phillips, C C; Skuras, E; Thomas, R; Zhang, X; Staton-Bevan, A; Pashley, D W
卷第4卷
期第8期
印刷ISSN0268-1242
电子ISSN1361-6641
文件大小1477.72KB
发表时间1989-08-01
DOI10.1088/0268-1242/4/8/010
页码663-676

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Observation and control of the amphoteric behaviour of Si-doped InSb grown on GaAs by MBE