Growth of InN on GaAs Substrates by the Reactive Evaporation Method
- 期刊名称Japanese Journal of Applied Physics
- 作者Sato, Yuichi; Sato, Susumu
- 卷第28卷
- 印刷ISSN0021-4922
- 文件大小612.05KB
- 发表时间1989-9-20
- DOI10.1143/JJAP.28.L1641
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