(InGa)AsGaAs strained layer quantum wells — excitonic properties and electronic structure
- 作者Geoffrey Duggan; Karen J. Moore; Karl Woodbridge; Christine Roberts
- 卷第228卷
- 文件大小344.76KB
- 发表时间1990
- DOI10.1016/0039-6028(90)90316-z
- 页码310-313
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