[IEEE International Technical Digest on Electron Devices - San Francisco, CA, USA (9-12 Dec. 1990)] International Technical Digest on Electron Devices - Advanced electron mobility model of MOS inversion layer considering 2D-degenerate electron gas physics
- 作者Ishizaka, M.; Iizuka, T.; Ohi, S.; Fukuma, M.; Mikoshiba, H.
- 文件大小315.79KB
- 发表时间1990
- DOI10.1109/iedm.1990.237049
- 页码763-766
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